Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET
نویسندگان
چکیده
منابع مشابه
Two-dimensional Modeling of Depletion Layer of MESFET GaAs
A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, the influence of the geometry of the component like distance between the gate and drain, or between gate and source. All simulations revealed the existence of a high electric field region near the gate contact, who create a depopulated zone around the gate, but the preceding studies hav...
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چکیده ندارد.
15 صفحه اولTesting of a GaAs MESFET Static RAM
This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2018
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2018.2861320